Part Number Hot Search : 
2A102KT UC3875C H838524 ADL55 GJSD1804 J110A CCF5515K P4202
Product Description
Full Text Search
 

To Download TN2510 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 TN2510 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS 100V * Same as SOT-89. RDS(ON) (max) 1.5 VGS(th) (max) 2.0V ID(ON) (min) 3.0A Order Number / Package TO-243AA* TN2510N8 Die TN2510ND
Product supplied on 2000 piece carrier tape reels. MIL visual screening available.
Product marking for TO-243AA:
Features
Low threshold --2.0V max. High input impedance Low input capacitance -- 125pF max. Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices
TN5A
Where = 2-week alpha date code
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches
Package Option
D G D S
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds.
11/12/01
BVDSS BVDGS 20V -55C to +150C 300C
TO-243AA (SOT-89)
Note: See Package Outline section for dimensions.
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
TN2510
Thermal Characteristics
Package TO-243AA
ID (continuous)* 0.73A
ID (pulsed) 5.0A
Power Dissipation @ TA = 25C 1.6W
jc
ja
IDR* 0.73A
IDRM 5.0A
C/W
15
C/W
78
* ID (continuous) is limited by max rated Tj.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25C unless otherwise specified)
Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 100 0.6 2.0 -4.5 100 10 1.0 ID(ON) RDS(ON) ON-State Drain Current 1.2 3.0 Static Drain-to-Source ON-State Resistance 2.0 6.0 15 1.5 1.0 RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 0.4 0.8 70 30 15 125 70 25 10 10 20 10 1.8 V ns VGS = 0V, ISD = 1.5A VGS = 0V, ISD = 1.5A ns VDD = 25V, ID = 1.5A, RGEN = 25 pF 2.0 1.5 0.75 %/C Typ Max Unit V V mV/C nA A mA A Conditions VGS = 0V, ID = 2mA VGS = VDS, ID= 1mA VGS = VDS, ID= 1.0mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 5.0V, VDS = 25V VGS = 10V, VDS = 25V VGS = 3.0V, ID = 250mA VGS = 4.5V, ID = 750mA VGS = 10V, ID = 750mA VGS = 10V, ID = 750mA VDS = 25V, ID = 1.0A VGS = 0V, VDS = 25V f = 1 MHz
Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90% INPUT
0V
PULSE GENERATOR
Rgen
10%
t(ON)
t(OFF) tr td(OFF) tF
td(ON)
VDD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
VDD
RL OUTPUT
D.U.T.
TN2510
Typical Performance Curves
10 8
Output Characteristics
10 8
Saturation Characteristics
ID (amperes)
4 2 0
8V 6V 4V 3V
0 10 20 30 VDS (volts) 40 50
ID (amperes)
6
VGS = 10V
6 4 2 0
VGS = 10V 8V 6V 4V 3V
0 2
VDS (volts)
4
6
8
10
2.0 1.6
Transconductance vs. Drain Current
VDS = 25V TA = -55C
2.0
Power Dissipation vs. Ambient Temperature
TO-243AA
GFS (siemens)
PD (watts)
1.2 0.8 0.4 0
TA = 25C TA = 125C
1.0
0
1
ID (amperes)
2
3
4
5
0
0
25
50
TC (C)
75
100
125
150
10
Maximum Rated Safe Operating Area
1.0 TO-243AA (pulsed)
Thermal Response Characteristics Thermal Resistance (normalized)
0.8 0.6 0.4 0.2 0 0.001 TO-243AA PD = 0.55W TC = 25C
ID (amperes)
1.0
TA = 25C
0.1
TO-243AA (DC)
0.01
1
10
VDS (volts)
100
1000
0.01
tp (seconds)
0.1
1
10
3
TN2510
Typical Performance Curves
BVDSS Variation with Temperature
1.1 10
On-Resistance vs. Drain Current
V GS = 5V
8
BVDSS (normalized)
RDS(ON) (ohms)
6
1.0
VGS = 10V
4
2
0.9 -50 0 50 100 150
0 0 2 4 6 8 10
Tj ( C) Transfer Characteristics
10
ID (amperes) V(th) and RDS Variation with Temperature
1.2 2.0
VGS = 25V
8
TA = -55C
RDS(ON) @ 5V, 0.75A
1.1
ID (amperes)
V(th) @ 1mA
1.6
6
25C
4
1.0
1.2
125C
2
0.9
0.8
0.8 0 0 2 4 6 8 10 -50 0 50 100 150
0.4
VGS (volts) Capacitance vs. Drain-to-Source Voltage
100 10
Tj ( C) Gate Drive Dynamic Characteristics
f = 1MHz CISS
8
VDS = 10V
75
C (picofarads)
VGS (volts)
6
50
VDS = 40V
4
190 pF
COSS
25 2
CRSS
0 0 10 20 30 40 0 0
70pF
0.5 1.0 1.5 2.0 2.5
VDS (volts)
QG (nanocoulombs)
11/12/01
(c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com
RDS(ON) (normalized)
VGS(th) (normalized)


▲Up To Search▲   

 
Price & Availability of TN2510

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X